The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Aug. 23, 2016
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Katsuhiro Sato, Yokkaichi, JP;

Kaori Deura, Yokohama, JP;

Yoshinori Kitamura, Tsu, JP;

Takahiro Terada, Yokohama, JP;

Yoshihiro Ogawa, Yokkaichi, JP;

Yuji Hashimoto, Yokkaichi, JP;

Masaaki Hirakawa, Yokohama, JP;

Yukako Murakami, Chigasaki, JP;

Hideaki Hirabayashi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67086 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 21/31111 (2013.01);
Abstract

A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.


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