The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Apr. 13, 2015
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Philipp Drechsel, Regensburg, DE;
Werner Bergbauer, Windberg, DE;
Juergen Off, Regensburg, DE;
Peter Stauss, Regensburg, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
What is specified is a method for producing a layer structure () as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (), which has a silicon surface (), b) deposition of a first layer sequence (), which comprises a seeding layer () containing aluminum and nitrogen, on the silicon surface () of the carrier () along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (), c) three-dimensional growth of a 3D-GaN layer (), which is formed with gallium nitride, on a top surface () of the first layer sequence () which is remote from the silicon surface (), d) two-dimensional growth of a 2D-GaN layer (), which is formed with gallium nitride, on the outer surfaces () of the 3D-GaN layer () which are remote from the silicon surface ().