The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Sep. 17, 2015
Qualcomm Incorporated, San Diego, CA (US);
Satyanarayana Sahu, San Diego, CA (US);
Renukprasad Shreedhar Hiremath, San Diego, CA (US);
Radhika Vinayak Guttal, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Hybrid diffusion standard library cells, and related systems and methods are disclosed. The hybrid diffusion standard library cells may be fabricated with reduced costs because masks corresponding to fixed base layers remain constant across integrated circuit (IC) devices. In one aspect, a hybrid diffusion standard library cell is provided. The hybrid diffusion standard library cell employs multiple diffusion regions, wherein a break region separates at least two of the multiple diffusion regions. The hybrid diffusion standard library cell includes one or more MEOL interconnects at fixed locations that are configured to connect transistors to a first metal layer. The hybrid diffusion standard library cell includes at least one transistor. Including the break region between multiple diffusion regions helps to limit the locations of the fixed MEOL interconnects, which limits possible locations for base level transistors and fixes the base layer design.