The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Nov. 04, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method for selecting transistor design parameters. A first set of simulations is used to calculate leakage current at a plurality of sets of design parameter values, and the results are fitted with a first response surface methodology model. The first model is used to generate a function that returns a value of a selected design parameter, for which a leakage current specification is just met. A second set of simulations is used to calculate effective drive current for a plurality of sets of design parameter values, and the results are fitted with a second response surface methodology model. The second model is used, together with the first, to search for a set of design parameter values at which a worst-case effective drive current is greatest, subject to the constraint of meeting the worst-case leakage current specification.