The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Feb. 04, 2016
Applicant:

Azbil Corporation, Tokyo, JP;

Inventor:

Kouji Yuuki, Tokyo, JP;

Assignee:

Azbil Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 38/00 (2006.01); G01L 1/00 (2006.01); B32B 37/18 (2006.01); G01L 9/00 (2006.01); B32B 17/06 (2006.01); B32B 37/00 (2006.01);
U.S. Cl.
CPC ...
G01L 1/00 (2013.01); B32B 17/06 (2013.01); B32B 37/18 (2013.01); G01L 9/0048 (2013.01); B32B 2037/0092 (2013.01); B32B 2315/08 (2013.01); B32B 2457/00 (2013.01);
Abstract

To facilitate the anodic bonding of individual layers without precipitation of movable ions in a three-layer structure interposing a glass substrate such as a silicon-glass-silicon structure, an anodic bonding condition for a sensor chip and a glass substrate in a secondary anodic bonding process is made weaker than an anodic bonding condition for a silicon tube and the glass substrate in a primary anodic bonding process. The secondary anodic bonding process is completed before movable ions in the glass substrate that have been attracted to a part of the glass substrate close to a cathode in the primary anodic bonding process reach a bonded surface between the glass substrate and the silicon tube in the secondary anodic bonding process.


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