The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Jul. 28, 2011
Applicants:

Kirsh Afimiwala, Shelton, CT (US);

Larry Zeng, Strongsville, OH (US);

Inventors:

Kirsh Afimiwala, Shelton, CT (US);

Larry Zeng, Strongsville, OH (US);

Assignee:

SLT TECHNOLOGIES, INC., Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 7/10 (2006.01); C30B 29/40 (2006.01); C30B 7/14 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 7/105 (2013.01); C30B 7/14 (2013.01); C30B 29/406 (2013.01); C30B 35/002 (2013.01); Y10T 117/1004 (2015.01); Y10T 117/1008 (2015.01); Y10T 117/1096 (2015.01);
Abstract

An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions.


Find Patent Forward Citations

Loading…