The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Jul. 31, 2017
Applicant:

Rafael Microelectronics, Inc., Hsinchu County, TW;

Inventor:

Chih-Wen Wu, Taichung, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/04 (2006.01); H03F 1/32 (2006.01); H03F 3/189 (2006.01); H03F 3/20 (2006.01); H04M 1/02 (2006.01);
U.S. Cl.
CPC ...
H03F 1/32 (2013.01); H03F 3/189 (2013.01); H03F 3/20 (2013.01); H03F 2200/451 (2013.01); H04M 1/0202 (2013.01);
Abstract

A bias circuit for supplying a bias current to a RF power amplifier by using at least two voltage reference circuits coupled between the base terminal of a bipolar transistor and a voltage supply for generating a bias current to the RF power amplifier, wherein each of the at least two voltage reference circuits respectively clamps to a reference voltage at a corresponding terminal node of the voltage reference circuit on a conductive path having a current flowing from the voltage supply to the base terminal of the bipolar transistor, wherein when the current flowing out of the voltage supply increases, the current flowing through each of the at least two voltage reference circuits will also increases, so that the variation range of the bias current to the RF power amplifier will be kept in a smaller range compared with the variation range of the current flowing out of the power supply, thereby increasing the linearity of the RF power amplifier.


Find Patent Forward Citations

Loading…