The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Apr. 16, 2015
Sony Corporation, Tokyo, JP;
Noriyuki Futagawa, Kanagawa, JP;
Tatsushi Hamaguchi, Kanagawa, JP;
Shoichiro Izumi, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
A light-emitting element includes at least a GaN substrate; a first light reflecting layerformed on the GaN substrateand functioning as a selective growth mask layer; a first compound semiconductor layer, an active layer, and a second compound semiconductor layerthat are formed on the first light reflecting layer; and a second electrodeand a second light reflecting layerthat are formed on the second compound semiconductor layer. An off angle of the plane orientation of the surface of the GaN substrateis 0.4 degrees or less, the area of the first light reflecting layeris 0.8Sor less, where Srepresents the area of the GaN substrate, and as a bottom layerA of the first light reflecting layer, a thermal expansion relaxation filmis formed on the GaN substrate