The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Jan. 09, 2018
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Masao Kawaguchi, Osaka, JP;
Osamu Imafuji, Osaka, JP;
Shinichiro Nozaki, Osaka, JP;
Hiroyuki Hagino, Osaka, JP;
Assignee:
PANASONIC CORPORATION, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/20 (2006.01); H01S 5/343 (2006.01); H01S 5/026 (2006.01); H01S 5/22 (2006.01); H01S 5/323 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2009 (2013.01); H01S 5/026 (2013.01); H01S 5/22 (2013.01); H01S 5/323 (2013.01); H01S 5/343 (2013.01); H01S 5/34333 (2013.01); H01S 5/02276 (2013.01);
Abstract
A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlGaN containing no Indium, where 0≤x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp≥0.25 μm and dn≥dp.