The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Jan. 27, 2017
Applicants:

Il-mok Park, Seoul, KR;

Dae-hwan Kang, Seoul, KR;

Gwan-hyeob Koh, Seoul, KR;

Inventors:

Il-Mok Park, Seoul, KR;

Dae-Hwan Kang, Seoul, KR;

Gwan-Hyeob Koh, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 27/224 (2013.01); H01L 27/2427 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract

Disclosed are a semiconductor memory device and a method of manufacturing the same. A first conductive line extends in a first direction on a substrate and has a plurality of protrusions and recesses that are alternately formed thereon. A second conductive line is arranged over the first conductive line in a second direction such that the first and the second conductive lines cross at the protrusions. A plurality of memory cell structures is positioned on the protrusions of the first conductive line and is contact with the second conductive line. A thermal insulating plug is positioned on the recesses of the first conductive line and reduces heat transfer between a pair of the neighboring cell structures in the first direction. Accordingly, the heat cross talk is reduced between the neighboring cell structures along the conductive line.


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