The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Mar. 14, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Hwan Hee Jeong, Seoul, KR;

Kwang Ki Choi, Seoul, KR;

June O Song, Seoul, KR;

Sang Youl Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/36 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 33/387 (2013.01); H01L 33/40 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A light emitting device including a substrate, a first conductive layer on the substrate, a second conductive layer on the first conductive layer, a metal layer on the second conductive layer, a light emitting structure on the metal layer and the second conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, and a passivation layer disposed on a side surface of the light emitting structure. Further, the metal layer directly contacts with the light emitting structure, the second conductive layer directly contacts with the light emitting structure, a portion of the passivation layer is disposed on a top surface of the light emitting structure, a width of the second conductive layer greater than a width of the metal layer, and a distance between a top surface of the substrate and a bottom surface of the metal layer at a center portion of the metal layer is different from a distance between the top surface of the substrate and the bottom surface of the metal layer at a side portion of the metal layer.


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