The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Jul. 11, 2018
First Solar, Inc., Tempe, AZ (US);
Holly Ann Blaydes, Perrysburg, OH (US);
Kristian William Andreini, Perrysburg, OH (US);
William Hullinger Huber, Perrysburg, OH (US);
Eugene Thomas Hinners, Perrysburg, OH (US);
Joseph John Shiang, Perrysburg, OH (US);
Yong Liang, Perrysburg, OH (US);
Jongwoo Choi, Perrysburg, OH (US);
Adam Fraser Halverson, Perrysburg, OH (US);
First Solar, Inc., Tempe, AZ (US);
Abstract
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.