The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Feb. 15, 2017
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Francois Boulard, Grenoble, FR;
Giacomo Badano, Lans En Vercors, FR;
Olivier Gravrand, Fontanil Cornillon, FR;
Abstract
The invention relates to a photodiode type structure (comprising: a support () including at least one semiconductor layer, the semiconductor layer () including of a first semiconductor zone () of a first type of conductivity and a mesa () in contact with the semiconductor layer (). The mesa () includes of a second semiconductor zone (), known as absorption zone, said second semiconductor zone () being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone () is depleted in the absence of polarization of the structure (). The structure () further comprises a third semiconductor zone () of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone () is interposed between the first and the second semiconductor zones () while being at least partially arranged in the semiconductor layer (). The invention also relates to a component and a method for manufacturing such a structure ().