The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Jun. 06, 2014
Applicant:

First Solar Malaysia Sdn. Bhd., Kulim, MY;

Inventors:

Bastiaan Arie Korevaar, Schenectady, NY (US);

Qunjian Huang, Schenectady, NY (US);

Yiteng Jin, Schenectady, NY (US);

Qianqian Xin, Schenectady, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0336 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0296 (2006.01); H01L 31/0392 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0336 (2013.01); H01L 31/02963 (2013.01); H01L 31/022441 (2013.01); H01L 31/022466 (2013.01); H01L 31/03925 (2013.01); H01L 31/068 (2013.01); H01L 31/1828 (2013.01); H01L 31/1864 (2013.01); H01L 31/1884 (2013.01); Y02E 10/547 (2013.01);
Abstract

A photovoltaic device includes a support layer; a first layer comprising cadmium, tellurium and copper and being of n-type; a second layer comprising cadmium, tellurium and copper and being of p-type; and a transparent conductive oxide layer. A method for making a photovoltaic device includes providing a stack comprising a cadmium and tellurium comprising layer and a copper comprising layer on the cadmium and tellurium comprising layer; and thermally annealing the stack to form a first layer and a second layer each comprising cadmium, tellurium and copper, the first layer being of n-type, the second layer being of p-type.


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