The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Dec. 15, 2015
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Hajime Imai, Sakai, JP;
Tohru Daitoh, Sakai, JP;
Hisao Ochi, Sakai, JP;
Tetsuo Fujita, Sakai, JP;
Hideki Kitagawa, Sakai, JP;
Tetsuo Kikuchi, Sakai, JP;
Masahiko Suzuki, Sakai, JP;
Shingo Kawashima, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Abstract
A semiconductor device () includes: a substrate (); and a thin film transistor () supported on the substrate, the thin film transistor including a gate electrode (), an oxide semiconductor layer (), a gate insulating layer () provided between the gate electrode and the oxide semiconductor layer, and a source electrode () and a drain electrode () electrically connected to the oxide semiconductor layer, wherein: the drain electrode is shaped so as to project toward the oxide semiconductor layer; a width Wand a width Wsatisfy a relationship |W−W|≤1 μm, where the width Wis a width of the oxide semiconductor layer in a channel width direction of the thin film transistor, and the width Wis a width of the drain electrode in a direction perpendicular to a direction in which the drain electrode projects; and the width Wand the width Ware 3 μm or more and 6 μm or less.