The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Jun. 30, 2016
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, Hubei, CN;
Junyan Hu, Guangdong, CN;
Wuhan China Star Optoelectronics Technology Co., Ltd, Wuhan, Hubei, CN;
Abstract
The present application discloses a method of manufacturing a thin film transistor, including following steps: forming a gate electrode on the top surface of the substrate; depositing a gate insulating layer, a semiconductor material and an etching stop layer sequentially on the gate electrode; patterning the etching stop layer by a first mask to form a stopper; depositing a second metal layer; using a second mask and a photoresist to form a source electrode region, a drain electrode region and a channel region on the surface of the second metal layer; etching the periphery region of the source electrode region, the drain electrode region and the channel region to expose the gate insulating layer; removing the photoresist and etching the second metal layer within the channel, and form a source electrode and a drain electrode by the remaining second metal layer; and irradiating the bottom of the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile