The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
May. 15, 2017
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Luisito Livellara, Cernusco sul Naviglio, IT;
Paolo Colpani, Agrate Brianza, IT;
Pierpaolo Monge Roffarello, Milan, IT;
STMICROELECTRONICS S.R.L., Agrate Brianza, IT;
Abstract
A method of manufacturing a vertical conduction semiconductor device comprising the steps of: forming a recess in a monocrystalline silicon substrate; forming a silicon oxide seed layer in the recess; carrying out an epitaxial growth of silicon on the substrate, simultaneously growing a polycrystalline silicon region in the seed layer and a monocrystalline silicon region in surface regions of the substrate, which surround the seed layer; and implanting dopant species in the polycrystalline silicon region to form a conductive path in order to render the second conduction terminal electrically accessible from a front side of the vertical conduction semiconductor device.