The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Jan. 12, 2016
Infineon Technologies Americas Corp., El Segundo, CA (US);
Adam Amali, Chandler, AZ (US);
Ling Ma, Redondo Beach, CA (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
A semiconductor device includes a gate trench in a semiconductor substrate, a source trench in the semiconductor substrate, the source trench having a first portion and a second portion under the first portion, where the first portion of the source trench is wider than the gate trench, and extends to a depth of the gate trench. The semiconductor device also includes a gate electrode and a gate trench dielectric liner in the gate trench, and a conductive filler and a source trench dielectric liner in the source trench. The semiconductor device further includes a source region between the gate trench and the source trench, a base region between the gate trench and the source trench, and a source contact coupled to the source region and the base region.