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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10141411 B1

PDFFull Text
Date of Patent:
Nov. 27, 2018

Filed:

Feb. 17, 2017

Temperature sensing semiconductor device

Applicants:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Denso Corporation, Kariya-shi, Aichi-ken, JP;

Inventors:

Atsushi Onogi, Toyota, JP;

Toru Onishi, Nagoya, JP;

Shuhei Mitani, Kariya, JP;

Yusuke Yamashita, Nagakute, JP;

Katsuhiro Kutsuki, Nagakute, JP;

Assignees:

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;

DENSO CORPORATION, Kariya, JP;

Attorney:

Oliff PLC

Primary Examiner:

Phat X Cao

Assistant Examiner:

Diana C Vieira

Int. Cl.
CPC ...
H01L 29/16 (2006.01); G01K 7/01 (2006.01); G01K 7/02 (2006.01); H01L 27/07 (2006.01); H01L 29/78 (2006.01); H01L 27/24 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 23/34 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); G01K 7/01 (2013.01); G01K 7/015 (2013.01); G01K 7/028 (2013.01); H01L 23/34 (2013.01); H01L 27/0255 (2013.01); H01L 27/0716 (2013.01); H01L 27/2454 (2013.01); H01L 29/083 (2013.01); H01L 29/1095 (2013.01); H01L 29/6606 (2013.01); H01L 29/7397 (2013.01); H01L 29/7804 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01); H01L 2924/12036 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.

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