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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10141409 B1

PDFFull Text
Date of Patent:
Nov. 27, 2018

Filed:

Mar. 24, 2016

Thin film transistor and array substrate thereof each having doped oxidized or doped graphene active region and oxidized graphene gate insulating layer and producing method thereof

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Dacheng Zhang, Beijing, CN;

Dianjie Hou, Beijing, CN;

Wenchu Dong, Beijing, CN;

Assignee:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

Attorneys:

Dilworth & Barrese, LLP.

Michael J. Musella, Esq.

Primary Examiner:

Michael Jung

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/34 (2006.01); H01L 21/44 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 21/04 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 21/041 (2013.01); H01L 21/28 (2013.01); H01L 21/34 (2013.01); H01L 21/44 (2013.01); H01L 27/12 (2013.01); H01L 27/1222 (2013.01); H01L 29/45 (2013.01); H01L 29/49 (2013.01); H01L 29/4908 (2013.01); H01L 29/51 (2013.01); H01L 29/66015 (2013.01); H01L 29/66045 (2013.01); H01L 29/66742 (2013.01); H01L 29/778 (2013.01); H01L 29/786 (2013.01); H01L 29/78684 (2013.01);
Abstract

A thin film transistor and a producing method thereof, and an array substrate, which belong to a technical field of the thin film transistor, can solve a problem of poor performance of a conventional thin film transistor. The producing method of the thin film transistor comprises: S: forming a gate electrode () composed of graphene; S: forming a gate insulating layer () composed of oxidized graphene; S: forming an active region () composed of doped oxidized graphene or doped graphene; S: forming a source electrode () and a drain electrode () composed of graphene, wherein, the graphene composing the source electrode (), the drain electrode () and the gate electrode () is formed by reducing oxidized graphene, and the doped oxidized graphene or doped graphene composing the active region () is formed by treating oxidized graphene.

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