The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Sep. 07, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Hideki Okumura, Nonoichi Ishikawa, JP;
Masanobu Tsuchitani, Kanazawa Ishikawa, JP;
Hiroto Misawa, Nomi Ishikawa, JP;
Akira Ezaki, Nonoichi Ishikawa, JP;
Tatsuya Shiraishi, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a first insulating layer, and a first insulating region. The second semiconductor region is provided on the first semiconductor region. The first insulating layer is provided around at least a portion of the first semiconductor region and at least a portion of the second semiconductor region. The first insulating layer contacts the second semiconductor region. The first insulating region is provided around at least a portion of the first insulating layer.