The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Apr. 16, 2017
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Hiroaki Sekikawa, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
When a trench that penetrates a semiconductor substrate in a scribe region in a solid-state imaging element of a back side illumination type, occurrence of contamination of the solid-state imaging element caused by an etching step for foaming the trench or a dicing step for singulating a semiconductor chip is prevented. When a silicide layer that covers a surface and the like of an electrode of a transistor is formed, in order to prevent formation of the silicide layer that covers a main surface of the semiconductor substrate in the scribe region, the main surface of the semiconductor substrate is covered with an insulation film before a forming step for the silicide layer.