The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Aug. 28, 2017
Applicant:

Tela Innovations, Inc., Los Gatos, CA (US);

Inventors:

Scott T. Becker, Scotts Valley, CA (US);

Michael C. Smayling, Fremont, CA (US);

Assignee:

Tela Innovations, Inc., Los Gatos, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01); H01L 27/092 (2006.01); H01L 23/522 (2006.01); G06F 17/50 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 23/528 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); G06F 17/5068 (2013.01); G06F 17/5072 (2013.01); H01L 21/28123 (2013.01); H01L 21/823871 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01); H01L 2027/11812 (2013.01); H01L 2027/11855 (2013.01); H01L 2027/11861 (2013.01); H01L 2027/11862 (2013.01); H01L 2027/11864 (2013.01); H01L 2027/11866 (2013.01); H01L 2027/11875 (2013.01); H01L 2027/11887 (2013.01); H01L 2027/11888 (2013.01);
Abstract

Gate structures are positioned within a region in accordance with a gate horizontal grid that includes at least seven gate gridlines separated from each other by a gate pitch of less than or equal to about 193 nanometers. Each gate structure has a substantially rectangular shape with a width of less than or equal to about 45 nanometers and is positioned to extend lengthwise along a corresponding gate gridline. Each gate gridline has at least one gate structure positioned thereon. A first-metal layer is formed above top surfaces of the gate structures within the region and includes first-metal structures positioned in accordance with a first-metal vertical grid that includes at least eight first-metal gridlines. Each first-metal structure has a substantially rectangular shape and is positioned to extend along a corresponding first-metal gridline. At least six contact structures of substantially rectangular shape contact the at least six gate structures.


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