The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Jan. 22, 2018
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11565 (2017.01); H01L 27/11568 (2017.01); H01L 21/311 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/76816 (2013.01); H01L 21/76829 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/11565 (2013.01); H01L 21/31116 (2013.01); H01L 23/544 (2013.01); H01L 27/11568 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01);
Abstract
A manufacturing method for a semiconductor device includes forming a first stacked structure, forming a first hole penetrating the first stacked structure, forming a reflective metal pattern in the first hole, filling an etch stop layer in the first hole and over the reflective metal pattern, forming a second stacked structure over the first stacked structure, and forming a second hole penetrating the second stacked structure to expose the etch stop layer.