The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Nov. 29, 2016
Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventor:

Yun Seok Hong, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 23/528 (2006.01); H01L 45/00 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 23/528 (2013.01); H01L 27/0266 (2013.01); H01L 27/0288 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H02H 9/046 (2013.01);
Abstract

A semiconductor integrated circuit device may include a first discharging unit and a second discharging unit. The first discharging unit may be coupled between a first line having a first voltage level and a second line having a second voltage level different from the first voltage level. The first discharging unit may be configured to discharge an electrical over stress (EOS) generated from the first line. The second discharging unit may be coupled between the first line and the second line. The second discharging unit may discharge the EOS in the first line to the second line based on an output signal from the first discharging unit.


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