The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Jun. 29, 2012
Applicant:

Waqas Khalid, Berkeley, CA (US);

Inventor:

Waqas Khalid, Berkeley, CA (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 23/532 (2006.01); H01J 1/304 (2006.01); H01J 9/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53276 (2013.01); H01J 1/3044 (2013.01); H01J 9/025 (2013.01); H01L 21/76886 (2013.01); H01L 23/525 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for manufacturing of a device including a first substrate including a plurality of sets of nanostructures arranged on the first substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method including the steps of: providing a substrate having a first face, the substrate having an insulating layer including an insulating material arranged on the first face of the substrate forming an interface between the insulating layer and the substrate; providing a plurality of stacks on the first substrate, wherein each stack includes a first conductive layer and a second conductive layer; heating the first substrate having the plurality of stacks arranged thereon in a reducing atmosphere to enable formation of nanostructures on the second conductive material; heating the first substrate having the plurality of stacks arranged thereon in an atmosphere such that nanostructures are formed on the second layer.


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