The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Mar. 05, 2018
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventor:
Tsutomu Kiyosawa, Toyama, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/66 (2006.01); H01L 29/78 (2006.01); H01L 21/82 (2006.01); H01L 23/522 (2006.01); H01L 21/8252 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 22/22 (2013.01); H01L 21/8213 (2013.01); H01L 21/8252 (2013.01); H01L 23/5226 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); H01L 29/66 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01); H01L 29/7827 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract
Semiconductor layeris formed on semiconductor substrateSemiconductor layerhas a plurality of well regionsin a surface remote from semiconductor substrateSemiconductor layerincludes drift regionin addition to the plurality of well regionsThe plurality of well regionseach include body regionsource regionand contact regionSource regionis in contact with body regionContact regionis in contact with both body regionand source regionBody regionsource regionand source wireare at an identical potential because of contact regionSemiconductor layerincludes ineffective region R at the surface remote from semiconductor substrate