The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

May. 20, 2013
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Reynante Tamunan Alvarado, San Diego, CA (US);

Lizabeth Ann Keser, San Diego, CA (US);

Jianwen Xu, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 21/78 (2006.01); H01L 21/311 (2006.01); B23K 26/40 (2014.01); B23K 26/364 (2014.01); B23K 103/16 (2006.01); B23K 26/382 (2014.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); B23K 26/40 (2013.01); H01L 21/31127 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 23/3185 (2013.01); B23K 26/364 (2015.10); B23K 26/389 (2015.10); B23K 2203/172 (2015.10); H01L 23/3178 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/94 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/14 (2013.01);
Abstract

Some implementations provide a semiconductor device that includes a substrate, several metal and dielectric layers coupled to the substrate, and a pad coupled to one of the several metal layers. The semiconductor device also includes a first metal layer coupled to the pad and an under bump metallization layer coupled to the first metal redistribution layer. The semiconductor device further includes a mold layer covering a first surface of the semiconductor device and at least a side portion of the semiconductor device. In some implementations, the mold layer is an epoxy layer. In some implementations, the first surface of the semiconductor device is the top side of the semiconductor device. In some implementations, the mold layer covers the at least side portion of the semiconductor device such that a side portion of at least one of the several metal layers and dielectric layers is covered with the mold layer.


Find Patent Forward Citations

Loading…