The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Feb. 24, 2011
Shunpei Yamazaki, Tokyo, JP;
Tamae Moriwaka, Kanagawa, JP;
Kazutaka Kuriki, Kanagawa, JP;
Mikio Yukawa, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Tamae Moriwaka, Kanagawa, JP;
Kazutaka Kuriki, Kanagawa, JP;
Mikio Yukawa, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.