The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Mar. 20, 2017
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Kyo Yeol Lee, Suwon-si, KR;
Yun Sung Kang, Suwon-si, KR;
Hai Joon Lee, Suwon-si, KR;
Dong Joon Oh, Suwon-si, KR;
Ho Phil Jung, Suwon-si, KR;
Seung Mo Lim, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/33 (2006.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); H01G 4/012 (2013.01); H01G 4/1227 (2013.01); H01G 4/1245 (2013.01);
Abstract
A thin film capacitor includes a body having first and second electrode layers and first and second dielectric layers alternately stacked on a substrate. A thickness of the first dielectric layer is 1.2 to 3 times that of the second dielectric layer. Therefore, leakage current characteristics of the dielectric layers may be improved, and capacitance of the thin film capacitor may be secured.