The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
May. 14, 2017
Samsung Display Co., Ltd., Yongin-si, KR;
Seung-Won Park, Seoul, KR;
Taewoo Kim, Seoul, KR;
Lei Xie, Suwon-si, KR;
Daehwan Jang, Seoul, KR;
Dae-Young Lee, Seoul, KR;
Gugrae Jo, Asan-si, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
An imprint lithography method includes forming a first imprint pattern on a substrate in a first area and a third area, wherein the third area is spaced apart from the first area, forming a first resist pattern on the substrate on a second area, wherein the second area is adjacent the first and third areas, forming a first pattern in the first and third areas by etching an element under the first imprint pattern using the first imprint pattern and the first resist pattern as an etch barrier, forming a second imprint pattern on the substrate in a second area, forming a second resist pattern on the substrate on the first area and the third area, and forming a second pattern in the second area by etching an element under the second imprint pattern using the second imprint pattern and the second resist pattern as an etch barrier.