The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Aug. 23, 2013
Applicant:

Kaneka Corporation, Osaka-shi, Osaka, JP;

Inventors:

Hironori Hayakawa, Settsu, JP;

Takashi Kuchiyama, Settsu, JP;

Hiroaki Ueda, Settsu, JP;

Assignee:

Kaneka Corporation, Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/08 (2006.01); G06F 3/041 (2006.01); C23C 14/58 (2006.01); H05K 1/02 (2006.01); H05K 1/03 (2006.01); H05K 3/16 (2006.01); H05K 3/38 (2006.01); H05K 1/09 (2006.01); H05K 3/22 (2006.01);
U.S. Cl.
CPC ...
C23C 14/086 (2013.01); C23C 14/34 (2013.01); C23C 14/5806 (2013.01); G06F 3/041 (2013.01); H05K 1/0274 (2013.01); H05K 1/0306 (2013.01); H05K 3/16 (2013.01); H05K 3/388 (2013.01); H05K 1/09 (2013.01); H05K 3/22 (2013.01); H05K 2201/0104 (2013.01); H05K 2201/0108 (2013.01); H05K 2201/0175 (2013.01); H05K 2201/0179 (2013.01); H05K 2201/0326 (2013.01); H05K 2203/1194 (2013.01);
Abstract

A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688×Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3×10Ωcm.


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