The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Feb. 12, 2015
Applicant:

Ford Global Technologies, Llc, Dearborn, MI (US);

Inventors:

Shinichi Hirano, West Bloomfield, MI (US);

Mark Stephen Ricketts, Windsor, CA;

Kerrie K. Gath, Pittsfield, MI (US);

Jun Yang, Bloomfield Hills, MI (US);

Chunchuan Xu, Troy, MI (US);

Assignee:

FORD GLOBAL TECHNOLOGIES, LLC, Dearborn, MI (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 8/0228 (2016.01); H01M 8/0206 (2016.01); H01M 8/021 (2016.01); H01M 8/0215 (2016.01); H01M 8/1018 (2016.01);
U.S. Cl.
CPC ...
H01M 8/0228 (2013.01); H01M 8/021 (2013.01); H01M 8/0206 (2013.01); H01M 8/0215 (2013.01); H01M 2008/1095 (2013.01); H01M 2250/20 (2013.01); Y02T 90/32 (2013.01);
Abstract

The present disclosure includes fuel cell bipolar plates and methods of forming a radical scavenging coating on a bipolar plate. The bipolar plates may include a steel substrate, a middle layer contacting the steel substrate and including a bulk material and a radical scavenging material, and a conductive layer contacting the middle layer. The radical scavenging material may include cerium, such as metallic cerium or a cerium oxide. The conductive layer may include a conductive carbon, such as a diamond-like carbon or coating (DLC). The radical scavenging material may comprise 0.1 wt % to 30 wt % of the middle layer. The middle layer may be deposited using PVD, and the radical scavenging material may be doped into the middle layer, for example, by co-sputtering it with the bulk material of the middle layer.


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