The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Aug. 28, 2017
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventor:

Kazuto Okamoto, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/08 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/20 (2013.01);
Abstract

A method of manufacturing a light emitting device includes preparing a wafer having a sapphire substrate with semiconductor structures, forming a plurality of straight-line cleavage starting portions within the substrate by scanning a laser beam, and cleaving the wafer along the cleavage starting portions to obtain a plurality of light emitting devices each having a hexagonal shape. The forming step includes forming first cleavage starting portions with each first cleavage starting portion separated by a first interval from a common vertex point of three adjacent light emitting devices, forming second cleavage starting portions with each first cleavage starting portion separated by a second interval, which is shorter than the first interval, away from the common vertex point, and forming third cleavage starting portions with each first cleavage starting portion separated by a third interval, which is shorter than the first interval, away from the common vertex point.


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