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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10134950 B1

PDFFull Text
Date of Patent:
Nov. 20, 2018

Filed:

Aug. 18, 2017

Micro light emitting diode and manufacturing method thereof

Applicant:

Genesis Photonics Inc., Tainan, TW;

Inventors:

Shao-Ying Ting, New Taipei, TW;

Yan-Ting Lan, Tainan, TW;

Jing-En Huang, Tainan, TW;

Yi-Ru Huang, Tainan, TW;

Assignee:

Genesis Photonics Inc., Tainan, TW;

Attorney:

JCIPRNET

Primary Examiner:

Bac Au

Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/38 (2010.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 25/0753 (2013.01); H01L 27/15 (2013.01); H01L 27/153 (2013.01); H01L 27/156 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/20 (2013.01); H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 33/44 (2013.01); H01L 33/06 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

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