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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10134929 B1

PDFFull Text
Date of Patent:
Nov. 20, 2018

Filed:

Oct. 14, 2015

Achieving band gap grading of czts and cztse materials

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Talia S. Gershon, White Plains, NY (US);

Richard A. Haight, Mahopac, NY (US);

Marinus Hopstaken, Carmel, NY (US);

Yun Seog Lee, White Plains, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Vazken Alexanian

Michael J. Chang, LLC

Primary Examiner:

Eric R Smith

Int. Cl.
CPC ...
H01L 31/032 (2006.01); H01L 21/02 (2006.01); H01L 31/18 (2006.01); H01L 31/072 (2012.01); H01L 31/065 (2012.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0326 (2013.01); H01L 21/0245 (2013.01); H01L 21/0251 (2013.01); H01L 21/0256 (2013.01); H01L 21/02381 (2013.01); H01L 21/02474 (2013.01); H01L 21/02477 (2013.01); H01L 21/02485 (2013.01); H01L 21/02557 (2013.01); H01L 21/02568 (2013.01); H01L 21/02573 (2013.01); H01L 21/02664 (2013.01); H01L 31/0392 (2013.01); H01L 31/065 (2013.01); H01L 31/072 (2013.01); H01L 31/1864 (2013.01); H01L 31/1892 (2013.01); Y02E 10/50 (2013.01);
Abstract

Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

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