The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Oct. 04, 2016
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Kotaro Kawahara, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
A mesa type p-n junction diode silicon carbide semiconductor device that includes a first silicon carbide semiconductor substrate, a first drift layer formed on the silicon carbide semiconductor substrate, a second anode layer formed on the drift layer, a mesa structure having a flat mesa bottom portion formed in an outer periphery thereof and having a mesa side wall obliquely formed with respect to a top face of the anode layer in a cross-section ranging from the anode layer to the drift layer, a second lightly doped region formed from an edge of the anode layer to the mesa bottom portion, and a second highly doped region formed on the side of the mesa side wall in the lightly doped region in contact with the edge of the anode layer and in a portion connected to the mesa bottom portion at a lower part of the mesa side wall.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile