The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

May. 30, 2018
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Nao Nagata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H02M 7/537 (2006.01); H01L 21/761 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 21/761 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/401 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/66348 (2013.01); H02M 7/537 (2013.01); H05K 999/99 (2013.01);
Abstract

A performance of a semiconductor device is improved. A semiconductor device includes two element portions and an interposition portion interposed between the two element portions. The interposition portion includes a p-type body region formed in a part of a semiconductor layer, the part being located between two trenches, and two p-type floating regions formed in two respective parts of the semiconductor layer, the two respective portions being located on both sides of the p-type body region via the two respective trenches. A lower end of the p-type floating region is arranged on a lower side with reference to a lower end of the p-type body region.


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