The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Sep. 25, 2017
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Nao Nagata, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a first trench gate electrode and a second trench gate electrode which are electrically connected to a gate electrode, and a third trench gate electrode and a fourth trench gate electrode which are electrically connected to an emitter electrode. A plurality of ptype semiconductor regions are formed in a part of a semiconductor layer between the first trench gate electrode and the second trench gate electrode. The plurality of ptype semiconductor regions are arranged to be spaced apart from each other along an extending direction of the first trench gate electrode when seen in a plan view.