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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10134877 B1

PDFFull Text
Date of Patent:
Nov. 20, 2018

Filed:

Apr. 08, 2016

Organic light emitting diode display having thin film transistor substrate using oxide semiconductor

Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Sungjin Hong, Goyang-si, KR;

Byungchul Ahn, Seoul, KR;

Youngju Koh, Paju-si, KR;

Woojin Nam, Goyang-si, KR;

Ryosuke Tani, Paju-si, KR;

Assignee:

LG DISPLAY CO., LTD., Seoul, KR;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Michael Trinh

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01); H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 21/44 (2006.01); H01L 21/4763 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/44 (2013.01); H01L 21/47635 (2013.01); H01L 27/1225 (2013.01); H01L 27/3262 (2013.01); H01L 27/3272 (2013.01); H01L 29/41733 (2013.01); H01L 29/42356 (2013.01); H01L 29/7869 (2013.01); H01L 29/7818 (2013.01); H01L 2227/323 (2013.01);
Abstract

A method for manufacturing an organic light emitting diode (OLED) display can include forming a gate electrode on a substrate, forming a semiconductor layer by depositing a gate insulating layer and an oxide semiconductor material and patterning the oxide semiconductor material, forming an etch stopper on a central portion of the semiconductor layer, conducting a plasma treatment using the etch stopper as a mask to conductorize portions of the semiconductor layer exposed by the etch stopper for defining a channel area, a source area and a drain area, and forming a source electrode contacting portions of the conductorized source area and a drain electrode contacting portions of the conductorized drain area.

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