The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Jun. 18, 2013
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Toshinari Sasaki, Shinagawa, JP;
Takashi Hamochi, Shimotsuga, JP;
Toshiyuki Miyamoto, Kanuma, JP;
Masafumi Nomura, Tochigi, JP;
Junichi Koezuka, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×10molecules/cm, preferably less than or equal to 3×10molecules/cm, more preferably less than or equal to 1×10molecules/cm, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×10molecules/cm, preferably less than or equal to 5×10molecules/cm, more preferably less than or equal to 1×10molecules/cm.