The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Aug. 17, 2017
Renesas Electronics Corporation, Tokyo, JP;
Yoshinao Miura, Tokyo, JP;
Hironobu Miyamoto, Ibaraki, JP;
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Abstract
A semiconductor device includes a channel layer formed over a substrate, a barrier layer formed on the channel layer and a gate electrode. A second gate electrode section is formed on the gate electrode via a gate insulating film. It becomes possible to make an apparent threshold voltage applied to the second gate electrode of a MISFET higher than an original threshold voltage applied to the gate electrode for forming a channel under the gate electrode by providing an MIM section configured by the gate electrode, the gate insulating film and the second gate electrode in this way.