The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Nov. 03, 2017
Renesas Electronics Corporation, Tokyo, JP;
Yosuke Takeuchi, Tokyo, JP;
Tatsuya Kunikiyo, Tokyo, JP;
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Abstract
An improvement is achieved in the performance of a semiconductor device. A semiconductor device includes an n-type semiconductor region formed in a p-type well, an n-type semiconductor region formed closer to a main surface of a semiconductor substrate than the n-type semiconductor region, and a p-type semiconductor region formed between the n-type semiconductor region and the n-type semiconductor region. A net impurity concentration in the n-type semiconductor region is lower than a net impurity concentration in the n-type semiconductor region. A net impurity concentration in the p-type semiconductor region is lower than a net impurity concentration in the p-type well.