The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Oct. 13, 2016
Applicant:
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Inventors:
Naoki Makita, Sakai, JP;
Satoru Tone, Sakai, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1277 (2013.01); H01L 27/1225 (2013.01); H01L 27/1237 (2013.01); H01L 27/1248 (2013.01); H01L 27/1251 (2013.01); H01L 27/1274 (2013.01); H01L 27/1288 (2013.01); H01L 29/401 (2013.01); H01L 29/7869 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 29/78672 (2013.01); H05K 999/99 (2013.01);
Abstract
A semiconductor device () includes: a substrate (); a first thin film transistor (A) supported on the substrate (), the first thin film transistor (A) having a first active region () which mainly contains a crystalline silicon; and a second thin film transistor (B) being supported on the substrate (), the second thin film transistor (B) having a second active region () which mainly contains an oxide semiconductor having a crystalline portion.