The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Aug. 06, 2015
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Guanghai Jin, Yongin, KR;

Yongjoo Kim, Yongin, KR;

Minhyeng Lee, Yongin, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/283 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01); H01L 21/283 (2013.01); H01L 21/28026 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1288 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H01L 2227/323 (2013.01);
Abstract

A thin-film transistor (TFT) array substrate including at least one TFT, the at least one TFT including a semiconductor layer including a source region and a drain region having a first doping concentration on a substrate, a channel region between the source and drain regions and having a second doping concentration, the second doping concentration being lower than the first doping concentration, and a non-doping region extending from the source and drain regions; a gate insulating layer on the semiconductor layer; a gate electrode on the gate insulating layer and at least partially overlapping the channel region; and a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the source region and the drain region, respectively.


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