The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Jun. 01, 2016
Applicants:
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;
Inventors:
Bingkun Yin, Beijing, CN;
Junhao Han, Beijing, CN;
Assignees:
BOE Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 21/02554 (2013.01); H01L 27/127 (2013.01); H01L 27/1262 (2013.01); H01L 27/1288 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G02F 2001/136236 (2013.01); H01L 29/66765 (2013.01); H01L 29/78669 (2013.01); H01L 29/78678 (2013.01);
Abstract
A method for manufacturing an oxide semiconductor TFT array substrate is provided, which including: successively depositing an oxide semiconductor active layer and a transparent conductive layer on a base substrate without breaking vacuum; and forming patterns of an active layer and a transparent conductive layer. An oxide semiconductor TFT array substrate is further provided.