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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10134740 B1

PDFFull Text
Date of Patent:
Nov. 20, 2018

Filed:

Jul. 10, 2017

Semiconductor device and method for fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Dong Wan Kim, Hwaseong-si, KR;

Ji Hun Kim, Hwaseong-si, KR;

Jae Joon Song, Suwon-si, KR;

Hiroshi Takeda, Seongnam-si, KR;

Jung Hoon Han, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/06 (2006.01); H01L 23/528 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 21/28088 (2013.01); H01L 23/528 (2013.01); H01L 27/10814 (2013.01); H01L 27/10876 (2013.01); H01L 29/0649 (2013.01); H01L 29/4236 (2013.01); H01L 29/4966 (2013.01); H01L 29/4991 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01);
Abstract

A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.

Find Patent Forward Citations

Kim, Dong. (2018). Semiconductor device and method for fabricating the same (U.S. Patent No. 10134740). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10134740

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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