The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Jun. 26, 2017
National Applied Research Laboratories, Taipei, TW;
Epistar Corporation, Hsinchu, TW;
Shih-Pang Chang, Hsinchu, TW;
Guang-Li Luo, Hsinchu, TW;
Szu-Hung Chen, Hsinchu, TW;
Wen-Kuan Yeh, Hsinchu, TW;
Jen-Inn Chyi, Hsinchu, TW;
Meng-Yang Chen, Hsinchu, TW;
Rong-Ren Lee, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Ta-Cheng Hsu, Hsinchu, TW;
National Applied Research Laboratories, Taipei, TW;
EPISTAR Corporation, Hsinchu, TW;
Abstract
A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.