The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Jan. 18, 2017
Toshiba Memory Corporation, Tokyo, JP;
Takuya Inatsuka, Yokkaichi Mie, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
A semiconductor storage device includes a substrate, a stack of first insulating layers and conductive layers that are alternately formed on the substrate in a memory region and a peripheral region and electrically insulated from each other, a second insulating layer covering the stack of the first insulating layers and the conductive layers in the peripheral region, and a plurality of contact wirings formed in the peripheral region, each contact wiring extending from an upper surface of the second insulating layer towards the substrate and electrically connected to a corresponding one of the conductive layers. In the peripheral region, each conductive layer has an extended portion that covers side and upper surfaces of an end portion of a first insulating layer that is formed immediately thereabove, and each contact wiring is in direct contact with the extended portion of the corresponding conductive layer.