The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Jan. 22, 2018
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Toshihiko Akiba, Tokyo, JP;

Bunji Yasumura, Tokyo, JP;

Masanao Sato, Tokyo, JP;

Hiromi Abe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); G01R 31/26 (2013.01); H01L 22/14 (2013.01); H01L 22/20 (2013.01); H01L 22/30 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/13 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 25/0657 (2013.01); H05K 999/99 (2013.01); H01L 24/73 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0392 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06133 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/10 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/4813 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48624 (2013.01); H01L 2224/48644 (2013.01); H01L 2224/48724 (2013.01); H01L 2224/4911 (2013.01); H01L 2224/49429 (2013.01); H01L 2224/49431 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/85951 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06517 (2013.01); H01L 2924/01002 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01083 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/30105 (2013.01);
Abstract

Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.


Find Patent Forward Citations

Loading…